代表性论文
1. Kai Zhao*, Baojuan Dong*, Yuang Wang* et al. Soft-matter-induced orderings in a solid-state van der Waals heterostructure, Nature Communications 16, 2359 (2025).
2. Mao-Lin Chen, Xingdan Sun, Hang Liu, Baojuan Dong†, Jing Zhang, Song Liu†, Dong-Ming Sun†, Zheng Han† et al: A FinFET with one atomic layer channel. Nature Communications 11, 1205 (2020)
3. Zhi Wang*, Tongyao Zhang*, Mei Ding*, Baojuan Dong*(contributed equally) et al: Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor. Nature nanotechnology 13(7), 554-559. (2018)
4. Baojuan Dong et al: Spontaneous antiferromagnetic order and strain effect on electronic properties of a-graphyne. Carbon 131 (2018): 223-228.
5. Baojuan Dong et al: New two-dimensional phase of tin chalcogenides: candidates for high-performance thermoelectric materials, Physical Review Materials 01/2019 3 (1), 013405.
6. Taojie Nian, Zhenhai Wang, Baojuan Dong†. Thermoelectric properties of α-In2Se3 monolayer. Appl. Phys. Lett. 118, 033103 (2021).
7. Lingling Ren; Baojuan Dong†; Ferroelectric Polarization in an h-BN-Encapsulated 30°- Twisted Bilayer–Graphene Heterostructure, Magnetochemistry, 2023, 9(5): 116-124
8. Yixiang Lu; Kai Zhao; Tongyao Zhang; Baojuan Dong†; Bipolar Nb3Cl8 Field Effect Transistors, Magnetochemistry, 2024, 10(6): 43
9. Linlin Chai; Fan Zhang; Yu Bai†; Baojuan Dong† ; Thermoelectric properties of monolayered MnBi2Te4, Journal of the American Ceramic Society, 2024, 107(11): 7331-7340
10. Baojuan Dong, Teng Yang, Jizhang Wang, Zhidong Zhang: Interface effect on structural and electronic properties of graphdiyne adsorbed on SiO2 and h-BN substrates: A first-principles study. Chinese Physics B 09/2015; 24(9).
11. Baojuan Dong, Teng Yang, Zheng Han: Flattening is flattering: The revolutionizing 2D electronic systems, Chinese Physics B 29 (9), 097307
12. Ye Zhang; Huaihong Guo†; Baojuan Dong† et al; Tailoring electronic properties of two-dimensional antimonene with isoelectronic counterparts, Chinene Physics B, 2020, 29: 037305
13. Xiaoxi Li; Baojuan Dong† et al; Perspectives on exfoliated two-dimensional spintronics, Chinese Journal of Semiconductors, 2019, 40(8): 081508
14. Hanwen Wang et al; Gate tunable giant anisotropic resistance in ultra-thin GaTe, Nature Communications, 2019, 10: 2302
15. Yaning Wang et al; Quantum Hall phase in graphene engineered by interfacial charge coupling, Nature Nanotechnology, 2022, 17(5): 1272-1279
16. Xiangyan Han et al; Suppression of symmetry-breaking correlated insulators in a rhombohedral trilayer graphene superlattice, Nature Communications, 2024, 15(1): 9765
17. Sun Xingdan et al; Room temperature ferromagnetism in ultra-thin van der Waals crystals of 1T-CrTe2, Nano Research, 2020, 13(12): 3358-3363
18. Kaci L Kuntz et al, ACS applied materials & interfaces 9 (10), 9126-9135 (2017)
19. J Wang et al; Stability and electronic properties of two-dimensional indium iodide, Physical Review B 95 (4), 045404 (2017)
20. 韩拯; 董宝娟; 陈茂林; 李小茜; 张桐耀 ; 一种3D打印全碳三维多层集成电路的方法, 2022-11-11, 中国, CN202010652758.9 (专利)
21. 韩拯; 陈茂林; 孙东明; 孙兴丹; 王汉文; 刘航; 董宝娟; 刘松; 一种单层原子沟道其实场效应晶体管的制备方法及产品, 2020-6-19, 中国, ZL202010142634.6 (专利)
22. 董宝娟；赵凯； 韩拯；张靖；王汉文；赵建亭；一种基于层间弱耦合器件的量子磁标及其制备方法，2024-11-8，中国，202411646880.X（已授权）
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